Title :
0.2 mu m gate pseudomorphic inverted HEMT for high speed digital ICs
Author :
Tsuji, H. ; Fujishiro, H.I. ; Shikata, M. ; Tanaka, K. ; Nishi, S.
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
A 0.2 mu m gate pseudomorphic inverted HEMT (high electron mobility transistor) has been developed for high-speed digital ICs. The fabricated pseudomorphic inverted HEMTs demonstrate a transconductance of 580 mS/mm and a cutoff frequency of 100 GHz. The shortest propagation delay in DCFL ring oscillator is 6.6 ps/gate with a power dissipation of 1.8 mW/gate. Using the pseudomorphic inverted HEMTs, a 1/8 static frequency divider IC and a 2:1 multiplexer IC are fabricated. The basic logic gate is E/D type DCFL. The static frequency divider IC operates up to 25 GHz. The 2:1 multiplexer IC generates a 20 Gb/s data stream from 10 Gb/s data streams.<>
Keywords :
digital integrated circuits; field effect integrated circuits; frequency dividers; high electron mobility transistors; integrated logic circuits; multiplexing equipment; 0.2 micron; 1/8 static frequency divider IC; 10 Gbit/s; 100 GHz; 20 Gbit/s; 25 GHz; 2:1 multiplexer IC; 580 mS; E/D type DCFL; high electron mobility transistor; high speed digital ICs; logic gate; pseudomorphic inverted HEMT; Cutoff frequency; Frequency conversion; HEMTs; Logic gates; MODFETs; Multiplexing; Power dissipation; Propagation delay; Ring oscillators; Transconductance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172647
