Title :
The fabrication process of AlGaAs/GaAs HBTs with low base resistance and low collector capacitance for 10 Gb/s IC chip sets
Author :
Masuda, H. ; Mochizuki, K. ; Kawata, M. ; Ishikawa, K. ; Mitani, K. ; Miyazaki, M. ; Kusano, C.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A fabrication technology for AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with low base resistance and low collector capacitance is developed. Self-aligned AlGaAs/GaAs HBTs show a high cutoff frequency of 45 GHz and maximum oscillation frequency of 70 GHz at collector current of 3.5 mA, and were successfully applied to IC chip sets for 10 Gb/s optical transmission. Among the fabricated 10 Gb/s IC chip sets, an AGC amplifier with 20 dB gain and 13.7 GHz bandwidth and a decision circuit with 66 mVp-p of ambiguity at 10 Gb/s are obtained, which are fully applicable to 10 Gb/s systems.<>
Keywords :
III-V semiconductors; aluminium compounds; amplifiers; automatic gain control; bipolar integrated circuits; capacitance; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; solid-state microwave devices; 10 Gbit/s; 13.7 GHz; 20 dB; 3.5 mA; 45 GHz; 70 GHz; AGC amplifier; AlGaAs-GaAs; HBTs; IC chip sets; collector current; cutoff frequency; decision circuit; heterojunction bipolar transistors; low base resistance; low collector capacitance; maximum oscillation frequency; optical transmission; self aligned technology; Bandwidth; Capacitance; Cutoff frequency; Fabrication; Gain; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Photonic integrated circuits; Stimulated emission;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172648
