Title :
A 45 GHz AlGaAs/GaAs HBT IC technology
Author :
Prasad, S.J. ; Vetanen, B. ; Haynes, C. ; Park, S. ; Beers, I. ; Diamond, Sara ; Pubanz, G. ; Ebner, J. ; Sanielevici, S. ; Agoston, A.
Author_Institution :
Tektronix, Beaverton, OR, USA
Abstract :
A non-self-aligned HBT (heterojunction bipolar transistor) IC process with f/sub T/ and f/sub max/ of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps risetime.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; scaling circuits; 45 GHz; 8.6 ps; AlGaAs-GaAs; HBT IC technology; HBT prescalar circuit; MIM capacitors; Schottky diodes; air-bridge inductors; cutoff frequency; nichrome resistors; nonself aligned HBT process; pulser circuit; risetime; Bipolar integrated circuits; Clocks; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Ion implantation; MIM capacitors; Process design; Resistors; Schottky diodes;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172649
