Title :
Common anode amplifier of a commercial MOS transistor in avalanche gated diode configuration
Author :
Rusu, Ana ; Dobrescu, Lidia ; Enachescu, Marius ; Rusu, Ana ; Burileanu, C.
Abstract :
In this paper we present a voltage amplifier using a gated diode in breakdown regime. The diode is biased with a constant current and is in common anode configuration. The measured diode was obtained from a commercial nMOS transistor that has the substrate pin available. The circuit will be analyzed in this paper and the theory is in good agreement with the measurements.
Keywords :
MOSFET; amplifiers; avalanche diodes; avalanche gated diode configuration; commercial nMOS transistor; common anode amplifier; voltage amplifier; Anodes; Breakdown voltage; Current measurement; Electric breakdown; Logic gates; MOSFETs; MOS transistor; avalanche; breakdown; common anode; gated diode; voltage amplifier;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400747
