DocumentCode
2799866
Title
Common anode amplifier of a commercial MOS transistor in avalanche gated diode configuration
Author
Rusu, Ana ; Dobrescu, Lidia ; Enachescu, Marius ; Rusu, Ana ; Burileanu, C.
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
403
Lastpage
406
Abstract
In this paper we present a voltage amplifier using a gated diode in breakdown regime. The diode is biased with a constant current and is in common anode configuration. The measured diode was obtained from a commercial nMOS transistor that has the substrate pin available. The circuit will be analyzed in this paper and the theory is in good agreement with the measurements.
Keywords
MOSFET; amplifiers; avalanche diodes; avalanche gated diode configuration; commercial nMOS transistor; common anode amplifier; voltage amplifier; Anodes; Breakdown voltage; Current measurement; Electric breakdown; Logic gates; MOSFETs; MOS transistor; avalanche; breakdown; common anode; gated diode; voltage amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400747
Filename
6400747
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