Title :
Modeling of self-heating in GaAs/AlGaAs HBTs for accurate circuit and device analysis
Author :
Baureis, P. ; Seitzer, D. ; Schaper, U.
Author_Institution :
Fraunhofer Inst. for Integrated Circuits, Erlangen, Germany
Abstract :
An improved HBT (heterojunction bipolar transistor) large signal model has been developed which allows calculation of intrinsic device temperature as a function of the dissipated power. The time dependence of this power effect is evaluated using pulsed on-wafer measurements. The calculated temperatures are proved to be correct by diode drop measurements with a pair of standard transistors. Simplified numerical simulations of the three-dimensional heat equations give similar results. An additional test structure-a broadband amplifier with a Darlington connected pair of transistors-is simulated to predict the intrinsic device temperatures and show reliability under normal operating conditions. Their thermal behaviors are confirmed with liquid crystal measurement techniques.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor device testing; temperature distribution; Darlington pair; GaAs-AlGaAs; HBT; broadband amplifier; diode drop measurements; dissipated power; heterojunction bipolar transistor; intrinsic device temperature; large signal model; liquid crystal measurement techniques; numerical simulations; pulsed on-wafer measurements; self-heating; test structure; three-dimensional heat equations; time dependence; Circuits; Diodes; Gallium arsenide; Heterojunction bipolar transistors; Measurement standards; Power measurement; Pulse amplifiers; Pulse measurements; Temperature measurement; Time measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172650
