• DocumentCode
    2799881
  • Title

    Analytical modeling of contact resistance in organic transistors

  • Author

    Bonea, A. ; Hassinen, T. ; Ofrim, B.A. ; Bonfert, D.C. ; Svasta, Paul

  • Author_Institution
    Politeh. Univ. of Bucharest, Bucharest, Romania
  • Volume
    2
  • fYear
    2012
  • fDate
    15-17 Oct. 2012
  • Firstpage
    399
  • Lastpage
    402
  • Abstract
    Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.
  • Keywords
    contact resistance; extrapolation; organic semiconductors; thin film transistors; DC sweep; MATLAB Simulink model; OTFT; PTAA organic transistor; TLM structure; analytic parameter extraction; channel length; channel resistance; drain contact resistance; extrapolation; interdigitated electrode; mathematical method; organic electronics; organic thin film transistor; parametric simulation; polytriarylamine; semiconductor; source contact resistance; transfer line method; Analytical models; Contact resistance; Integrated circuit modeling; Mathematical model; Resistance; Semiconductor device measurement; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2012 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-857X
  • Print_ISBN
    978-1-4673-0737-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2012.6400748
  • Filename
    6400748