DocumentCode
2799881
Title
Analytical modeling of contact resistance in organic transistors
Author
Bonea, A. ; Hassinen, T. ; Ofrim, B.A. ; Bonfert, D.C. ; Svasta, Paul
Author_Institution
Politeh. Univ. of Bucharest, Bucharest, Romania
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
399
Lastpage
402
Abstract
Organic thin film transistors (OTFTs) are of significant interest for the development of organic electronics. The devices described in this paper, through measurements, analytic extraction of parameters and simulations, are organic transistor having Polytriarylamine (PTAA) as semiconductor. This paper refers to the determination of the source and drain contact resistance of these PTAA organic transistors. The MATLAB Simulink model is based on an analytic model, for which DC Sweep and parametric simulations were employed in order to obtain the total resistance. The results are processed in accordance to the Transfer Line Method (TLM). This mathematical method uses results on the total channel resistance of the thin film transistors with various channel lengths in order to extrapolate the contact resistance. The TLM structures considered here are bottom contact top gate OTFTs with interdigitated electrodes of various channel lengths. The values of the contact resistance are considered equal due to the symmetry of the measured structure.
Keywords
contact resistance; extrapolation; organic semiconductors; thin film transistors; DC sweep; MATLAB Simulink model; OTFT; PTAA organic transistor; TLM structure; analytic parameter extraction; channel length; channel resistance; drain contact resistance; extrapolation; interdigitated electrode; mathematical method; organic electronics; organic thin film transistor; parametric simulation; polytriarylamine; semiconductor; source contact resistance; transfer line method; Analytical models; Contact resistance; Integrated circuit modeling; Mathematical model; Resistance; Semiconductor device measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400748
Filename
6400748
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