DocumentCode
2799884
Title
Thermal simulation and design of a GaAs HBT sample and hold circuit
Author
Poulton, K. ; Knudsen, K.L. ; Corcoran, J.J. ; Wang, K.-C. ; Pierson, R.L. ; Nubling, R.B. ; Chang, M.-C.F.
Author_Institution
Hewlett-Packard Lab., Palo Alto, CA, USA
fYear
1991
fDate
20-23 Oct. 1991
Firstpage
129
Lastpage
132
Abstract
Methods which are used to predict and measure device temperatures within an IC are described, and their application to the design of an HBT (heterojunction bipolar transistor) sample and hold circuit (S/H) is discussed. A new thermal simulation tool called ThCalc is also described. ThCalc calculates the temperature profile of an IC and runs fast enough to allow calculations on a whole chip.<>
Keywords
III-V semiconductors; bipolar integrated circuits; circuit layout CAD; gallium arsenide; linear integrated circuits; sample and hold circuits; temperature distribution; GaAs; HBT sample and hold circuit; ThCalc; circuit design; device temperatures; temperature profile; thermal simulation tool; Circuit simulation; Circuit testing; Current density; Gallium arsenide; Heterojunction bipolar transistors; Resistance heating; Silicon; Temperature measurement; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-0196-X
Type
conf
DOI
10.1109/GAAS.1991.172651
Filename
172651
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