DocumentCode :
2799897
Title :
ZNO-on-nanocrystalline diamond lateral bulk acoustic resonators
Author :
Abdolvand, Reza ; Ho, Gavin K. ; Butler, James ; Ayazi, Farrokh
Author_Institution :
Georgia Inst. of Technol., Atlanta
fYear :
2007
fDate :
21-25 Jan. 2007
Firstpage :
795
Lastpage :
798
Abstract :
This paper reports, for the first time, on thin-film piezoelectric-on-diamond composite bulk acoustic resonators. These resonators benefit from the large elastic modulus of the nano-crystalline diamond to increase the resonance frequency, and the high electromechanical coupling of the piezoelectric transduction to reduce the motional impedance. More than 1.8times increase in the resonance frequency is measured for devices fabricated on 2 mum thick diamond compared to the same size devices made on 6 mum thick silicon on insulator substrate. A device with 5 mum feature size exhibits a high resonance frequency of 1.2 GHz. A small motional impedance of 225 Omega is reported for a device operating at 173 MHz. The temperature coefficient of frequency (TCF) is measured to be as small as -2 ppm/degC as a result of including an oxide layer in the device structure.
Keywords :
acoustic resonators; bulk acoustic wave devices; nanostructured materials; piezoelectric devices; piezoelectric thin films; silicon-on-insulator; TCF; ZNO-on-nanocrystalline diamond; bulk acoustic resonator; electromechanical coupling; frequency 1.2 GHz; frequency 173 MHz; large elastic modulus; motional impedance; piezoelectric transduction; resistance 225 ohm; silicon-on-insulator substrate; size 2 mum; size 5 mum; size 6 mum; temperature coefficient-of-frequency; thin-film piezoelectric-on-diamond composite; Acoustic devices; Acoustic measurements; Frequency measurement; Impedance; Piezoelectric films; Resonance; Resonant frequency; Silicon on insulator technology; Size measurement; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location :
Hyogo
ISSN :
1084-6999
Print_ISBN :
978-1-4244-095-5
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2007.4433131
Filename :
4433131
Link To Document :
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