Title :
Substrate leakage current influence on bandgap voltage references in automotive applications
Author :
Radoias, L. ; Zegheru, C. ; Brezeanu, G.
Author_Institution :
INFINEON Technol. Romania, Bucharest, Romania
Abstract :
This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm2. A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).
Keywords :
BiCMOS integrated circuits; compensation; leakage currents; reference circuits; automotive application; bandgap voltage reference; current 4 muA; low quiescent current; second order compensation; standard BiCMOS technology; substrate leakage current elimination; temperature -40 degC to 170 degC; voltage 3 mV; well-known bandgap architecture; BiCMOS integrated circuits; Leakage current; Photonic band gap; Substrates; Temperature distribution; Temperature measurement; Transistors;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400752
