مرکز منطقه ای اطلاع رساني علوم و فناوري - High power operation of GaAs and AlGaAs single quantum well broad-area laser diodes for Nd: YAG laser pumping

DocumentCode :

2799961

Title :

High power operation of GaAs and AlGaAs single quantum well broad-area laser diodes for Nd: YAG laser pumping

Author :

Shigihara, K. ; Shima, A. ; Nagai, Y. ; Takami, A. ; Karakida, S. ; Kokubo, Y. ; Matsubara, H. ; Kakimoto, S.

Author_Institution :

Mitsubishi Electric Corporation

fYear :

1990

fDate :

9-14 Sept. 1990

Firstpage :

274

Lastpage :

275

Keywords :

Diode lasers; Gallium arsenide; Life testing; Mirrors; Neodymium; Power generation; Power lasers; Pump lasers; Reflectivity; Threshold current;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International

Conference_Location :

Davos, Switzerland

Type :

conf

DOI :

10.1109/ISLC.1990.764523

Filename :

764523

Link To Document :