Title :
MESFET MMIC Ka-band transmitter performance for high volume system applications
Author :
Mondal, Jayant ; Becker, R. ; Geddes, J. ; Contolatis, T. ; Vickberg, M. ; Carlson, D. ; Bounnak, S. ; Anderson, C. ; Sokolov, V.
Author_Institution :
SRC Honeywell Inc., Bloomington, MN, USA
Abstract :
A monolithic transmitter consisting of a voltage controlled oscillator and power amplifier has been successfully demonstrated for Ka-band high volume system applications (smart munitions) using nominally quarter micron MESFET technology. The results show that this technology is able to deliver good performance without compromising on yield and cost in Ka-band. With improvement in 1/f noise in HEMTs (high electron mobility transistors), it will be a viable candidate for VCOs in the future. Also shown is a unified design approach for VCOs and power amplifiers using small signal analysis.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; microwave oscillators; military equipment; power amplifiers; radio transmitters; variable-frequency oscillators; 0.25 micron; 1/f noise; MESFET MMIC Ka-band transmitter; VCOs; high volume system applications; power amplifier; small signal analysis; smart munitions; unified design; voltage controlled oscillator; Costs; HEMTs; High power amplifiers; MESFETs; MMICs; MODFETs; Signal design; Transmitters; Voltage-controlled oscillators; Weapons;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172658
