MESFET MMIC Ka-band transmitter performance for high volume system applications

Author

Mondal, Jayant ; Becker, R. ; Geddes, J. ; Contolatis, T. ; Vickberg, M. ; Carlson, D. ; Bounnak, S. ; Anderson, C. ; Sokolov, V.

Author_Institution

SRC Honeywell Inc., Bloomington, MN, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

153

Lastpage

156

Abstract

A monolithic transmitter consisting of a voltage controlled oscillator and power amplifier has been successfully demonstrated for Ka-band high volume system applications (smart munitions) using nominally quarter micron MESFET technology. The results show that this technology is able to deliver good performance without compromising on yield and cost in Ka-band. With improvement in 1/f noise in HEMTs (high electron mobility transistors), it will be a viable candidate for VCOs in the future. Also shown is a unified design approach for VCOs and power amplifiers using small signal analysis.<>

Keywords

MMIC; field effect integrated circuits; microwave amplifiers; microwave oscillators; military equipment; power amplifiers; radio transmitters; variable-frequency oscillators; 0.25 micron; 1/f noise; MESFET MMIC Ka-band transmitter; VCOs; high volume system applications; power amplifier; small signal analysis; smart munitions; unified design; voltage controlled oscillator; Costs; HEMTs; High power amplifiers; MESFETs; MMICs; MODFETs; Signal design; Transmitters; Voltage-controlled oscillators; Weapons;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172658

Filename

172658