Title :
A monolithic Ka-band transmitter using 0.25 mu m GaAs MESFET technology
Author :
Wang, H. ; Aust, M.V. ; Yang, D. ; Becker, R. ; Rezek, E. ; Allen, B. ; Fletcher, L.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A monolithic Ka-band transmitter using 0.25 mu m GaAs MESFET technology has been developed. This MMIC chip consists of a VCO and a power amplifier. An output power of 21.5 dBm with a tuning range of 600 MHz centered at 35.8 GHz has been achieved. The average RF yield of this transmitter chip, using the specifications of 17 dBm output power and 400 MHz tuning range, is as high as 40%. The high yield number obtained from this high level integration MMIC of multifunctional chips indicates the maturity of the quarter micron GaAs MESFET technology.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave oscillators; power amplifiers; radio transmitters; variable-frequency oscillators; 0.25 micron; 35.8 GHz; GaAs; GaAs MESFET technology; MMIC chip; RF yield; VCO; monolithic Ka-band transmitter; multifunctional chips; output power; power amplifier; tuning range; Gallium arsenide; MESFETs; MIMICs; MMICs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172659
