A monolithic Ka-band transmitter using 0.25 mu m GaAs MESFET technology

Author

Wang, H. ; Aust, M.V. ; Yang, D. ; Becker, R. ; Rezek, E. ; Allen, B. ; Fletcher, L.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

157

Lastpage

160

Abstract

A monolithic Ka-band transmitter using 0.25 mu m GaAs MESFET technology has been developed. This MMIC chip consists of a VCO and a power amplifier. An output power of 21.5 dBm with a tuning range of 600 MHz centered at 35.8 GHz has been achieved. The average RF yield of this transmitter chip, using the specifications of 17 dBm output power and 400 MHz tuning range, is as high as 40%. The high yield number obtained from this high level integration MMIC of multifunctional chips indicates the maturity of the quarter micron GaAs MESFET technology.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave oscillators; power amplifiers; radio transmitters; variable-frequency oscillators; 0.25 micron; 35.8 GHz; GaAs; GaAs MESFET technology; MMIC chip; RF yield; VCO; monolithic Ka-band transmitter; multifunctional chips; output power; power amplifier; tuning range; Gallium arsenide; MESFETs; MIMICs; MMICs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Transmitters; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172659

Filename

172659