Low-loss, high-power, broadband GaAs MMIC multi-bit digital attenuators with on-chip TTL drivers

Author

Ali, F. ; Mitchell, S. ; Podell, A.

Author_Institution

Pacific Monolithics, Sunnyvale, CA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

243

Lastpage

246

Abstract

The design and performance of low-loss, high-power, multi-bit GaAs MMIC digital attenuators are presented. A four-bit digital attenuator with 1 dB steps, operating from DC to 6 GHz, has a maximum 2 dB insertion loss at 6 GHz and 85 degrees C. A two-bit digital attenuator covering DC to 2 GHz in 16 dB steps has 0.9 dB insertion loss at 2 GHz. The chip size for both of these attenuators is 48*48 mils including on-chip digital decoders. The attenuators are capable of handling greater than 23 dBm of input power at any attenuation level, and the return loss across the band is better than 18 dB.<>

Keywords

III-V semiconductors; MMIC; decoding; driver circuits; gallium arsenide; waveguide attenuators; 0 to 6 GHz; 0.9 dB; 2 bits; 2 dB; 4 bits; 85 degC; GaAs; III-V semiconductors; MMIC multi-bit digital attenuators; chip size; input power; insertion loss; on-chip TTL drivers; on-chip digital decoders; return loss; Attenuation; Attenuators; Decoding; Driver circuits; FETs; Gallium arsenide; Insertion loss; MMICs; Radio frequency; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172660

Filename

172660