• DocumentCode
    2800060
  • Title

    Novel shear strength evaluation of MEMS materials using asymmetrical four-point bending technique

  • Author

    Ogawa, Masato ; Isono, Yoshitada

  • Author_Institution
    Ritsumeikan Univ., Shiga
  • fYear
    2007
  • fDate
    21-25 Jan. 2007
  • Firstpage
    259
  • Lastpage
    262
  • Abstract
    This paper describes a novel shear testing technique for MEMS materials based on an asymmetrical four-point bending (AFPB) method (Izumi and Ping, 2005). This research has newly developed a shear tester and a AFPB test specimen that are able to apply simple shear stress loading to a micro single crystal silicon (SCS) specimen with "U" shaped notches (U-notches), in order to estimate shear strength and to observed fracture behavior for the SCS specimens under shear stressing. Consequently, we have, for the first time, succeeded in evaluating the shear strength and shear strain of SCS on a microscale. Averaged shear modulus of SCS was obtained 53.7 GPa in [112] direction on (110) plane, which was close to theoretical value. The shear strength of SCS ranged from 1.0 to 1.3 GPa. The fracture behavior under the shear stressing was observed. The crack initiated on the slip plane at the bottom of U-notches, whereas it propagated perpendicularly to the maximum principal stress direction predicted by FEM.
  • Keywords
    bending; cracks; fracture; materials testing; micromechanical devices; shear strength; silicon; FEM; MEMS materials; U-shaped notches; asymmetrical four-point bending; crack initiation; fracture behavior; micro single crystal silicon; shear strain; shear strength; shear stressing; shear testing; Compressive stress; Materials science and technology; Materials testing; Micromechanical devices; Mirrors; Optical devices; Silicon; System testing; Telephony; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
  • Conference_Location
    Hyogo
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-095-5
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2007.4433140
  • Filename
    4433140