180 GHz InAlAs/InGaAs HEMT monolithic integrated frequency doubler

Author

Kwon, Y. ; Pavlidis, D. ; Marsh, P. ; Tutt, M. ; Ng, G.I. ; Brock, T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

165

Lastpage

168

Abstract

The design, monolithic microwave integrated circuit (MMIC) implementation, and testing of a 180 GHz doubler based on InP-HEMT (high electron mobility transistor) technology is reported. Doublers were fabricated using submicron (0.1 mu m) InAlAs/InGaAs HEMTs. A simplified harmonic content study was employed in order to understand the power characteristics in HEMT doublers. The experimental conversion loss followed the predicted performance and showed a minimum conversion loss of 6 dB at 0 dBm input power.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; frequency multipliers; gallium arsenide; indium compounds; 0.1 micron; 180 GHz; 6 dB; HEMT monolithic integrated frequency doubler; InAlAs-InGaAs; InP; MMIC; conversion loss; harmonic content; power characteristics; Circuit testing; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Integrated circuit testing; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172662

Filename

172662