Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Author

Ofrim, B. ; Udrea, F. ; Brezeanu, G. ; Hsieh, A.P.

Author_Institution

Politeh. Univ. of Bucharest, Bucharest, Romania

Volume

2

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

367

Lastpage

370

Abstract

Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO₂, TiO₂ and ZnO) and thicknesses (50-10nm) was conducted. The TiO₂ based structure has better performance than the SiO₂ and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers.

Keywords

II-VI semiconductors; MOS capacitors; gas sensors; hydrogen; interface states; silicon compounds; titanium compounds; wide band gap semiconductors; zinc compounds; C-V characteristics; H₂; MOS capacitor-based hydrogen sensor; SiC-SiO₂; SiC-TiO₂; SiC-ZnO; chemically reactive environments; gas sensing; high temperature reactive environments; hydrogen concentration; hydrogen sensor; interface traps; size 50 nm to 10 nm; thinner oxide layers; Capacitance-voltage characteristics; Hydrogen; Interface states; MOS capacitors; Silicon carbide; Temperature; Temperature sensors; MOS capacitor; SiC; hydrogen sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400759

Filename

6400759