DocumentCode
2800120
Title
High power single-frequency continuously tunable compact extended-cavity semiconductor laser
Author
Laurain, A. ; Myara, M. ; Garnache, A. ; Sagnes, I. ; Beaudoin, G.
Author_Institution
Inst. d´´Electron. duSud, Univ. Montpellier 2, Montpellier, France
fYear
2009
fDate
14-19 June 2009
Firstpage
1
Lastpage
1
Abstract
A highly coherent high power tunable laser design can be achieved using an extended-cavity quantum-well (QW) semiconductor surface emitting laser in a stable optical cavity, so called External-cavity VCSELs (VeCSELs) GaAs-based VCSEL emitting at lambda=1mum.
Keywords
III-V semiconductors; gallium arsenide; laser cavity resonators; laser tuning; optical design techniques; optical materials; quantum well lasers; surface emitting lasers; GaAs; VCSEL; continuously tunable compact extended-cavity laser; extended-cavity quantum-well semiconductor surface; highly coherent high power tunable laser design; wavelength 1 mum; Frequency; Laser beam cutting; Laser noise; Laser radar; Laser theory; Power lasers; Pump lasers; Semiconductor lasers; Surface emitting lasers; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-4079-5
Electronic_ISBN
978-1-4244-4080-1
Type
conf
DOI
10.1109/CLEOE-EQEC.2009.5192846
Filename
5192846
Link To Document