Reliability of state-of-the-art GaAs pseudomorphic low-noise HEMTs

Author

Hu, W.W. ; Chao, P.C. ; Kao, M.Y. ; Finke, R.J. ; Swanson, A.W.

Author_Institution

General Electric, Syracuse, NY, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

191

Lastpage

194

Abstract

High-temperature DC accelerated life tests on AlGaAs/InGaAs/GaAs pseudomorphic low-noise HEMTs were performed at three temperatures. It was found that the pseudomorphic HEMT is as reliable as the GaAs MESFET and GaAs conventional HEMT. Based on a failure criterion of -10% gm, the activation energy is 1.74 eV and the projected life at 150 degrees C is about 4*10/sup 6/ hours. The failure mechanism was found to be dominated by source resistance increase.<>

Keywords

III-V semiconductors; aluminium compounds; failure analysis; gallium arsenide; high electron mobility transistors; indium compounds; life testing; reliability; semiconductor device testing; 150 degC; 4*10/sup 6/ h; AlGaAs-InGaAs-GaAs; DC accelerated life tests; activation energy; failure criterion; failure mechanism; high temperature testing; pseudomorphic low-noise HEMTs; reliability; source resistance increase; Gallium arsenide; HEMTs; Indium gallium arsenide; Life estimation; Life testing; MESFETs; MODFETs; PHEMTs; Performance evaluation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172669

Filename

172669