DocumentCode
2800179
Title
A model of the voltage barrier in the channel of 4H-SiC normally-off JFET´s
Author
Di Benedetto, Luigi ; Bellone, Salvatore
Author_Institution
Dept. of Electron. & Comput. Eng., Univ. of Salerno, Salerno, Italy
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
355
Lastpage
358
Abstract
A model of the potential barrier in the channel of normally-off 4H-SiC JFET´s is shown. It allows to evaluate the barrier height and the minority carrier density in the center of the channel for an arbitrary geometry and bias condition. The validity of the model is justified by comparing the model with numerical simulations carried out on various channel topologies.
Keywords
geometry; junction gate field effect transistors; numerical analysis; silicon compounds; SiC; arbitrary geometry; minority carrier density; normally-off JFET; numerical simulations; voltage barrier; Doping; Electric fields; JFETs; Logic gates; Numerical models; Numerical simulation; Silicon carbide; 4H polytype of Silicon Carbide (4H-SiC); JFET; voltage barrier;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400762
Filename
6400762
Link To Document