The lateral superjunction PSOI LIGBT and LDMOSFET

Author

Antoniou, M. ; Tee, E. Kho Ching ; Pilkington, S.J. ; Pal, D.K. ; Udrea, F. ; Hoelke, Alexander Dietrich

Author_Institution

Electr. Eng., Univ. of Cambridge, Cambridge, UK

Volume

2

fYear

2012

fDate

15-17 Oct. 2012

Firstpage

351

Lastpage

354

Abstract

This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with R_dson of 765mΩ.mm2. It exhibits reduced specific on-state resistance R_dson and higher saturation current (I_dsat) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology.

Keywords

MOSFET; electric fields; insulated gate bipolar transistors; silicon-on-insulator; BV; LDMOSFET; PSOI HV process; breakdown voltage; lateral insulated-gate bipolar transistors; lateral superjunction LIGBT; partial silicon-on-insulator technology; reduced specific on-state resistance; saturation current; size 0.18 mum; superjunction drift region; uniform electric field distribution; voltage 210 V; Anodes; Insulated gate bipolar transistors; Junctions; Logic gates; Silicon; Silicon on insulator technology; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2012 International

Conference_Location

Sinaia

ISSN

1545-857X

Print_ISBN

978-1-4673-0737-6

Type

conf

DOI

10.1109/SMICND.2012.6400763

Filename

6400763