Title :
The lateral superjunction PSOI LIGBT and LDMOSFET
Author :
Antoniou, M. ; Tee, E. Kho Ching ; Pilkington, S.J. ; Pal, D.K. ; Udrea, F. ; Hoelke, Alexander Dietrich
Author_Institution :
Electr. Eng., Univ. of Cambridge, Cambridge, UK
Abstract :
This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with Rdson of 765mΩ.mm2. It exhibits reduced specific on-state resistance Rdson and higher saturation current (Idsat) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology.
Keywords :
MOSFET; electric fields; insulated gate bipolar transistors; silicon-on-insulator; BV; LDMOSFET; PSOI HV process; breakdown voltage; lateral insulated-gate bipolar transistors; lateral superjunction LIGBT; partial silicon-on-insulator technology; reduced specific on-state resistance; saturation current; size 0.18 mum; superjunction drift region; uniform electric field distribution; voltage 210 V; Anodes; Insulated gate bipolar transistors; Junctions; Logic gates; Silicon; Silicon on insulator technology; Transistors;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400763
