Title :
Experimental evidence of Ti/Pt/Au-GaAs interaction obtained by means of TEM technique
Author :
Magistrali, F. ; Sala, D. ; Turner, J. ; Valli, P. ; Vanzi, M.
Author_Institution :
Telettra S.p.A., Vimercate Milano, Italy
Abstract :
A description is presented of an investigation of a thermally activated gate-semiconductor interaction, obtained by means of the TEM technique. The correlation of this technique to the electrical measurements aids in understanding the evolution of the degradation. It is shown how only the use of TEM is effective for failure analysis when ion-implanted devices are used in connection with the Ti/Pt/Au gate.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; chemical interdiffusion; failure analysis; gallium arsenide; gold alloys; metallisation; platinum alloys; reliability; semiconductor-metal boundaries; titanium alloys; transmission electron microscope examination of materials; MESFET; TEM; TiPtAu-GaAs interaction; degradation; electrical measurements; failure analysis; ion-implanted devices; reliability; thermally activated gate-semiconductor interaction; Electric variables measurement; FETs; Failure analysis; Gallium arsenide; Gold; MMICs; Ohmic contacts; Phase change materials; Testing; Thermal degradation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172671
