A physically-based analytic model for stress-induced hole mobility enhancement

A novel computationally efficient model for stress-modulated hole mobility, suitable for a continuum transport simulators, has been developed and implemented. The physically-based model captures bandstructure modulation due to stress, and reproduces the experimental mobility behavior over a wide range of stress, electric fields, and current directions. The model is validated and calibrated using a set of wafer bending experiments. Devices of various lengths (with built-in stress) are subjected to additional longitudinal or transverse stress from the wafer bending, for a total stress range (bending plus structural) of 700 MPa tensile to 800 MPa compressive. The overall agreement to data is found to be very good, with only a slight increase (/spl sim/10% for typical cases) in the required CPU time.