Monolithic ultrahigh-speed GaAs HBT optical integrated receivers

Author

Pedrotti, K.D. ; Sheng, N.H. ; Pierson, R.L., Jr. ; Farley, C.W. ; Rosker, M.J. ; Chang, M.F.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

205

Lastpage

208

Abstract

Monolithic optoelectronic receiver circuits have been produced with bandwidths as high as 13 GHz for optical signals in the 0.8 mu m band. This implies suitability for digital transmission at rates up to 17 Gb/s. To the authors´ knowledge these are the fastest OEICs (optoelectronic integrated circuits) realized to date. The input noise measured at 10 pA/Hz/sup 1/2/ implies a 10/sup -9/ bit error rate sensitivity of -12 dBm into this bandwidth. The transimpedance of these receivers is 250 Omega .<>

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; high-speed optical techniques; integrated optoelectronics; optical communication equipment; receivers; 0.8 micron; 13 GHz; 17 Gbit/s; GaAs; bandwidths; bit error rate sensitivity; digital transmission; input noise; monolithic optoelectronic receiver circuits; optical integrated receivers; transimpedance; ultrahigh speed OEIC; Bandwidth; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit measurements; Integrated circuit noise; Integrated optics; Noise measurement; Optical noise; Optical receivers; Optical sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172673

Filename

172673