Pseudomorphic 2DEG FET ICs for ultra high-speed optical communication systems with an external optical modulator

Author

Suzuki, Y. ; Suzaki, T. ; Ogawa, Y. ; Liu, W. ; Fujita, S. ; Okamoto, A.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

213

Lastpage

216

Abstract

An optical modulator driver IC and a preamplifier IC for 10 Gb/s optical communication systems have been constructed. AlGaAs/InGaAs/GaAs pseudomorphic 2DEG FETs with a gate length of 0.35 mu m have implemented these ICs. The optical modulator driver IC has operated at a data rate above 10 Gb/s with a 4 V/sub P-P/ high output voltage swing. The measured bandwidth for the preamplifier IC is 13.0 GHz with a 47 dB Omega transimpedance gain.<>

Keywords

driver circuits; field effect integrated circuits; linear integrated circuits; optical communication equipment; optical modulation; preamplifiers; 0.35 micron; 10 Gbit/s; 13 GHz; AlGaAs-InGaAs-GaAs; bandwidth; data rate; external optical modulator; gate length; high output voltage swing; optical modulator driver IC; preamplifier IC; pseudomorphic 2DEG FETs; transimpedance gain; ultra high-speed optical communication systems; FETs; Gain measurement; Gallium arsenide; High speed optical techniques; Indium gallium arsenide; Optical fiber communication; Optical modulation; Photonic integrated circuits; Preamplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172675

Filename

172675