A 1 Gb/s 8*8 self-routing switch LSI for broadband ISDN

Author

Seki, S. ; Yamada, Hiroyoshi ; Tsunotani, M. ; Sano, Y. ; Kawakami, Y. ; Akiyama, M.

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

221

Lastpage

224

Abstract

The architecture and the performance of a 1 Gb/s 8 *8 self-routing switch LSI for broadband integrated services digital network (B-ISDN) applications are described. This LSI consists of a switching network for exchanging the packet cells and a NEMAWASHI network which detects the cell destined to the same output port. The basic network architecture is a self-routing switch using the Batcher-Banyan network. In this system, the external circuit for routing control is not necessary. The LSI is fabricated using 0.5 mu m gate GaAs MESFETs. The results of the dynamic evaluation show full operation at a data rate of 1 Gb/s.<>

Keywords

III-V semiconductors; ISDN; digital integrated circuits; field effect integrated circuits; gallium arsenide; large scale integration; switching networks; time division multiplexing; 0.5 micron; 1 Gbit/s; ATM communication; B-ISDN; Batcher-Banyan network; GaAs; MESFETs; NEMAWASHI network; broadband ISDN; data rate; dynamic evaluation; network architecture; self-routing switch LSI; switching network; B-ISDN; Broadcasting; Circuit synthesis; Clocks; Counting circuits; Driver circuits; Gallium arsenide; Large scale integration; Sorting; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172677

Filename

172677