DocumentCode :
2800345
Title :
Multi-dimensional tunneling in density-gradient theory
Author :
Ancona, M.G. ; Lilja, K.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
38
Lastpage :
39
Abstract :
For engineering-oriented simulations of quantum confinement effects, density-gradient (DG) theory has come into wide use including in multi-dimensions. It is therefore somewhat curious that the DG description of tunneling (Ancona, 1990) has not been similarly applied to practical device simulation. The two most important explanations would seem to be: (i) questions of principle; and (ii) that the existing DG theory is restricted to one-dimensional tunneling for which quantum mechanics (e.g., NEGF) often provides a realistic alternative. In the present work our primary focus is on how tunneling problems can be treated in multi-dimensions in DG theory.
Keywords :
electron density; semiconductor device models; tunnelling; density-gradient theory; device simulation; electron density; multidimensional tunneling; Charge carrier density; Semiconductor device modeling; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
Type :
conf
DOI :
10.1109/IWCE.2004.1407309
Filename :
1407309
Link To Document :
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