A production ready, 6-18 GHz five-bit phase shifter with integrated CMOS compatible digital interface circuitry

Author

Simon, K.M. ; Schindler, M.J. ; Mieczkowski, V.A. ; Newman, P.F. ; Goldfarb, M.E. ; Reese, E. ; Small, B.A.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

251

Lastpage

254

Abstract

A producible, high yield, MMIC (monolithic microwave integrated circuit) 6-18 GHz 5-bit phase shifter with integrated standard CMOS compatible digital interface circuitry has been developed for use over the -55 degrees to +90 degrees C temperature range. The phase shifter was fabricated in production quantities using a standard microwave process. The phase shifter has an RMS phase error <10 degrees from 6.5-18 GHz, maximum insertion loss of 14 dB, and an RMS amplitude error <0.8 dB over the 6-18 GHz band.<>

Keywords

CMOS integrated circuits; MMIC; phase shifters; -55 to 90 degC; 14 dB; 5 bits; 6 to 18 GHz; CMOS compatible digital interface circuitry; MMIC; RMS amplitude error; RMS phase error; insertion loss; phase shifter; production quantities; standard microwave process; CMOS digital integrated circuits; CMOS integrated circuits; Integrated circuit yield; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Phase shifters; Production; Standards development; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172684

Filename

172684