X-band HBT VCO with high-efficiency CB buffer amplifier

Author

Wang, N.L. ; Ho, W.J.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

255

Lastpage

258

Abstract

A monolithic AlGaAs/GaAs HBT VCO with common-base (CB) buffer amplifier was demonstrated at X-band. Overall efficiency of 30% was achieved with 93 mW output power at 9.8 GHz. The small size (1 mm by 2 mm) MMIC chip circuit design offers several unique advantages: (1) the CB buffer amplifier reduces the frequency pull effect from the external load; (2) the designs for the oscillation condition and the output impedance match for power are separated; (3) the overall efficiency can be high. A step-by-step design procedure is introduced.<>

Keywords

MMIC; bipolar integrated circuits; buffer circuits; heterojunction bipolar transistors; microwave oscillators; variable-frequency oscillators; 30 percent; 9.8 GHz; 93 mW; AlGaAs-GaAs; CB buffer amplifier; HBT VCO; MMIC chip circuit design; X-band; frequency pull effect; oscillation condition; output impedance match; Circuit synthesis; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance; MMICs; Power amplifiers; Power generation; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172685

Filename

172685