Title :
A 15-GHz monolithic low phase noise VCO using AlGaAs/GaAs HBT
Author :
Yamauchi, Yoshiki ; Kamitsuna, Hideki ; Muraguchi, Masahiro ; Osafune, Kazuo
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
A 15-GHz monolithic low phase noise VCO (voltage controlled oscillator) IC constructed with an AlGaAs/GaAs HBT (heterojunction bipolar transistor) and a variable capacitance diode or varactor has been developed. The HBT and the varactor are constructed in an IC chip using a standard HBT IC process. A wide tuning range of about 600 MHz is obtained with varying control voltage from 0 to 4 V with an output power of more than -4 dBm. The low phase noise level for an offset frequency of 100 kHz of -85 dBc/Hz was measured at a frequency of 15.6 GHz.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave oscillators; variable-frequency oscillators; 0 to 4 V; 15.6 GHz; AlGaAs-GaAs; HBT; III-V semiconductors; MMIC; VCO; control voltage; offset frequency; output power; phase noise; tuning range; varactor; variable capacitance diode; Bipolar integrated circuits; Capacitance; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Monolithic integrated circuits; Phase noise; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172686
