Title :
Monolithic receivers with integrated temperature compensation function
Author :
Dow, G.S. ; Chen, T.H. ; Ton, T.N. ; Aust, M. ; Yonaki, J. ; Carandang, R. ; Yang, D. ; Quadrozzi, M. ; Andrews, S.S. ; Titus, W.
Author_Institution :
TRW MTDO, Redondo Beach, CA, USA
Abstract :
Two highly integrated monolithic receivers were developed for X-band and S/C-band applications. Each receiver chip has integrated five single-function microcells: RF amplifier, mixer, LO driver, IF amplifier, and a novel temperature compensation/variable attenuator. The X-band receiver chip downconverts an input 6 to 10 GHz to an output 4.0 to 6.0 GHz and has exhibited a conversion gain greater than 15 dB, SSB noise figure less than 12 dB, and output IP/sub 3/ greater than 20 dBm. The S/C-band receiver chip downconverts an input 4 to 6 GHz to an output 0.5 to 1.5 GHz and has exhibited a conversion gain greater than 8.0 dB, SSB noise figure less than 7.5 dB, and output IP/sub 3/ greater than 14 dBm.<>
Keywords :
MMIC; frequency convertors; receivers; 0.5 to 10 GHz; IF amplifier; LO driver; RF amplifier; S/C-band applications; SSB noise figure; X-band; conversion gain; integrated monolithic receivers; integrated temperature compensation function; mixer; single-function microcells; temperature compensation/variable attenuator; Amplitude modulation; Attenuators; Driver circuits; Frequency conversion; Gallium arsenide; Microcell networks; Mixers; Noise figure; Radiofrequency amplifiers; Temperature distribution;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172688
