• DocumentCode
    2800488
  • Title

    Study of piezoelectrycity in structures based on nanofibrous ZnO layers and polysilane

  • Author

    Ghimpu, Lidia ; Cojocaru, V. ; Soroceanu, M. ; Sacarescu, L. ; Katashev, A. ; Harabagiu, V. ; Tiginyanu, Ion

  • Author_Institution
    Lab. of Nanotechnol., Inst. of Electron. Eng. & Nanotechnol., Chisinau, Moldova
  • Volume
    2
  • fYear
    2012
  • fDate
    15-17 Oct. 2012
  • Firstpage
    295
  • Lastpage
    298
  • Abstract
    Zinc oxide films were deposited by method rf magnetron sputtering in a mixed environment of oxygen and argon on two types of substrates, glass and silicon substrates with different orientations, by varying the deposition parameters in order to obtain high-quality ZnO nanostructured layers. An atomic force microscope was used to measure the piezoelectricity in nanofibrous layers and poly [methyl (H) silane]. The interaction between the type of semiconductor/poly[methyl(H)silane] and the applied electric field has proved that the given structures are piezoelectric materials useful for fabrication of optoelectronic devices.
  • Keywords
    II-VI semiconductors; atomic force microscopy; conducting polymers; nanofabrication; nanofibres; piezoelectric semiconductors; piezoelectric thin films; piezoelectricity; polymer fibres; polymer films; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; AFM; Si; SiO2; ZnO; applied electric field; atomic force microscope; deposition parameters; glass substrate; high-quality ZnO nanostructured layers; mixed environment; nanofibrous ZnO layers; optoelectronic device fabrication; piezoelectric materials; piezoelectricity; poly[methyl(H)silane]; rf magnetron sputtering; silicon substrate; zinc oxide films; Films; Nanobioscience; Oscillators; Silicon; Sputtering; Substrates; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2012 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-857X
  • Print_ISBN
    978-1-4673-0737-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2012.6400780
  • Filename
    6400780