DocumentCode
2800488
Title
Study of piezoelectrycity in structures based on nanofibrous ZnO layers and polysilane
Author
Ghimpu, Lidia ; Cojocaru, V. ; Soroceanu, M. ; Sacarescu, L. ; Katashev, A. ; Harabagiu, V. ; Tiginyanu, Ion
Author_Institution
Lab. of Nanotechnol., Inst. of Electron. Eng. & Nanotechnol., Chisinau, Moldova
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
295
Lastpage
298
Abstract
Zinc oxide films were deposited by method rf magnetron sputtering in a mixed environment of oxygen and argon on two types of substrates, glass and silicon substrates with different orientations, by varying the deposition parameters in order to obtain high-quality ZnO nanostructured layers. An atomic force microscope was used to measure the piezoelectricity in nanofibrous layers and poly [methyl (H) silane]. The interaction between the type of semiconductor/poly[methyl(H)silane] and the applied electric field has proved that the given structures are piezoelectric materials useful for fabrication of optoelectronic devices.
Keywords
II-VI semiconductors; atomic force microscopy; conducting polymers; nanofabrication; nanofibres; piezoelectric semiconductors; piezoelectric thin films; piezoelectricity; polymer fibres; polymer films; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; AFM; Si; SiO2; ZnO; applied electric field; atomic force microscope; deposition parameters; glass substrate; high-quality ZnO nanostructured layers; mixed environment; nanofibrous ZnO layers; optoelectronic device fabrication; piezoelectric materials; piezoelectricity; poly[methyl(H)silane]; rf magnetron sputtering; silicon substrate; zinc oxide films; Films; Nanobioscience; Oscillators; Silicon; Sputtering; Substrates; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400780
Filename
6400780
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