Title :
A comparative study of GaAs MESFET backgating
Author_Institution :
Brigham Young Univ., Provo, UT, USA
Abstract :
A comparison is made of backgating characteristics between fabricators to illustrate the value of such a comparison and the difficulties encountered in making such a comparison. In this study, a common set of backgating tests is used to correlate results from structures fabricated at different facilities and fabricated using different processes. Wafers from three facilities are compared. A description is presented of the test structure geometry and major process characteristics of the wafers included in this comparison. A comparison is made of backgating between wafers with respect to the major backgating parameters of time response, voltage response, and test structure geometry. The sources of backgating in light of the comparison data are discussed along with the applicability of the jazz standard for backgating measurement.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device testing; GaAs; III-V semiconductors; MESFET; backgating characteristics; backgating tests; jazz standard; process characteristics; test structure; test structure geometry; time response; voltage response; Gallium arsenide; Geometry; Implants; Integrated circuit modeling; Intrusion detection; MESFETs; Oxygen; Testing; Time factors; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172694
