Title :
Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs
Author :
Yamakawa, S. ; Goodnick, S.M. ; Aboud ; Saraniti, M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
A full-band cellular Monte Carlo (CMC) approach (Saraniti and Goodnick, 2000) is applied to simulation of electron transport in AlGaN/GaN HEMTs with quantum corrections included via the effective potential method. The full-band CMC transport model is based on a detailed model of the electron-phonon interactions in the wurtzite crystal structure using the rigid pseudo-ion model, where the anisotropic deformation potentials are derived from the electronic band structure, the atomic pseudopotential, and the phonon dispersion. Realistic polar-optical phonon, impurity, piezoelectric and dislocation scatterings are also included in the full-band CMC simulator, which shows good agreement with measured velocity-field data from pulsed I-V measurements at Arizona State University (Barker, 2002).
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; electron mobility; electron-phonon interactions; gallium compounds; high electron mobility transistors; phonon dispersion relations; semiconductor device models; AlGaN-GaN; HEMT; anisotropic deformation potentials; atomic pseudopotential; dislocation scatterings; electron transport simulation; electron-phonon interactions; electronic band structure; full-band CMC transport model; full-band cellular Monte Carlo simulation; phonon dispersion; polar-optical phonon; quantum corrections; rigid pseudo-ion model; wurtzite crystal structure; Aluminum compounds; Charge carrier mobility; Electrons; Gallium compounds; MODFETs; Monte Carlo methods; Phonons; Semiconductor device modeling;
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
DOI :
10.1109/IWCE.2004.1407317
