Title :
Electrical properties of lead telluride single crystals doped with Gd
Author :
Todosiciuc, A. ; Nicorici, Andrey ; Condrea, E. ; Warchulska, J.
Author_Institution :
Inst. of Electron. Eng. & Nanotechnol., Chisinau, Moldova
Abstract :
Temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The features of electron transport in PbTe: Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions exist in different charge states.
Keywords :
Hall mobility; IV-VI semiconductors; Seebeck effect; carrier density; electrical conductivity; gadolinium; lead compounds; magnetic susceptibility; narrow band gap semiconductors; thermoelectric power; PbTe:Gd; Seebeck coefficient; charge states; electric conductivity; electrical properties; electron transport; free carrier concentration; free carrier mobility; gadolinium-doped lead telluride single crystals; impurity content; magnetic susceptibility; single-crystalline samples; thermoelectric power factor; variable gadolinium valence; Conductivity; Crystals; Impurities; Tellurium; Temperature; Temperature dependence; Temperature measurement; lead telluride single crystals; magnetic susceptibility; narrow-gap semiconductors; rare earths;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400788
