A novel broadband bidirectional matrix amplifier

Author

Chu, S.L.G. ; Schindler, M.J. ; Bertrand, A.M. ; Tsukii, T.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

315

Lastpage

318

Abstract

The design, fabrication, and performance of a 6-18 GHz, 2*5 bidirectional matrix distributed amplifier is described. This amplifier, having two bidirectional distributed amplifier chains stacked together, shares the same gain elements in both the transmit and receive directions. The amplifier has shown >10 dB gain with better than +or-0.5 dB of gain tracking and +or-5.0 degrees of phase tracking between the transmit and receive directions over the 7-17 GHz frequency band. In addition, the biasing scheme of this amplifier enables the stages to be connected in cascade at RF frequencies and in cascode for DC biasing, thus conserving current.<>

Keywords

MMIC; field effect integrated circuits; microwave amplifiers; wideband amplifiers; 10 dB; 6 to 18 GHz; DC biasing; biasing scheme; bidirectional matrix amplifier; broadband; cascade; cascode; distributed amplifier; monolithic microwave IC; stacked chains, MMIC; Broadband amplifiers; Distributed amplifiers; Distributed parameter circuits; Fabrication; Gain; Gallium arsenide; Phased arrays; Radio frequency; Radiofrequency amplifiers; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172702

Filename

172702