Title :
5-60 GHz high-gain distributed amplifier utilizing InP cascode HEMTs
Author :
Yuen, C. ; Pao, Y.C. ; Bechtel, N.G.
Author_Institution :
Litton Solid State Div., Santa Clara, CA, USA
Abstract :
A high-gain InP MMIC (monolithic microwave integrated circuit) cascode distributed amplifier has been developed which has 12 dB of gain from 5 to 60 GHz with over 20 dB gain control capability and a noise figure of 2.5-4 dB in the Ka-band. Lattice-matched InAlAs-InGaAs cascode HEMTs (high electron mobility transistor) on InP with 0.25 mu m gate length were the active devices. Microstrip was the transmission medium for this MMIC with an overall chip dimensions of 2.3 by 0.9 mm/sup 2/.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; 0.25 micron; 12 dB; 2.5 to 4 dB; 5 to 60 GHz; InP; Ka-band; MMIC; cascode HEMTs; distributed amplifier; high electron mobility transistor; high-gain; lattice-matched semiconductor; microstrip; monolithic microwave integrated circuit; Distributed amplifiers; Gain control; HEMTs; Indium phosphide; Integrated circuit noise; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172703
