DocumentCode
2800702
Title
MMIC circuit optimization using FIB techniques
Author
Itoh, K. ; Ishikawa, T. ; Komaru, M. ; Orisaka, S. ; Nishitani, K. ; Otsubo, M.
Author_Institution
Mitsubishi Electric Corp., Hyogo, Japan
fYear
1991
fDate
20-23 Oct. 1991
Firstpage
323
Lastpage
326
Abstract
It is reported that focused ion beam (FIB) techniques have been successfully applied to optimization of an X-band single stage MMIC (monolithic microwave integrated circuit) amplifier. Modification of MMIC components has been performed by etching of circuit patterns and depositing tungsten films. RF performance of the MMIC has been adjusted to the designed one without any further wafer process. It shows that these techniques are promising to develop MMICs.<>
Keywords
MMIC; integrated circuit technology; microwave amplifiers; sputter deposition; sputter etching; FIB techniques; MMIC; RF performance; W film deposition; X-band; amplifier; circuit optimization; circuit patterns; etching; focused ion beam; monolithic microwave integrated circuit; trimming; Circuit optimization; Etching; Ion beams; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave theory and techniques; Monolithic integrated circuits; Radiofrequency amplifiers; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-0196-X
Type
conf
DOI
10.1109/GAAS.1991.172704
Filename
172704
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