• DocumentCode
    2800738
  • Title

    Conductometric sensors based on InGaAs/GaAs nanocoils

  • Author

    Bell, Dominik J. ; Rüst, Philipp ; Dong, Lixin ; Schön, Silke ; Nelson, Bradley J.

  • Author_Institution
    ETH Zurich, Zurich
  • fYear
    2007
  • fDate
    21-25 Jan. 2007
  • Firstpage
    847
  • Lastpage
    850
  • Abstract
    We present the use of integrated semiconductor nanocoils for conductometric sensors. The three-dimensional structures are made of an n-type InGaAs/GaAs bilayer. They are suspended over the chip surface and connected to one electrode on each side. The process is based on conventional batch microfabrication techniques. Process and design features that are critical for the realization of this type of device are described. High sensor performance can be achieved due to the high surface-to-volume ratio of the helical nanostructures. The use of these structures for temperature sensors and for photoconductive detectors is demonstrated.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; microsensors; nanostructured materials; photoconducting devices; temperature sensors; 3D structures; InGaAs-GaAs; InGaAs/GaAs nanocoils; batch microfabrication techniques; conductometric sensors; helical nanostructures; n-type InGaAs/GaAs bilayer; photoconductive detectors; semiconductor nanocoils; temperature sensors; Etching; Gallium arsenide; Indium gallium arsenide; Intelligent sensors; Nanobioscience; Nanostructures; Optical sensors; Resists; Substrates; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
  • Conference_Location
    Hyogo
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-095-5
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2007.4433178
  • Filename
    4433178