DocumentCode
2800738
Title
Conductometric sensors based on InGaAs/GaAs nanocoils
Author
Bell, Dominik J. ; Rüst, Philipp ; Dong, Lixin ; Schön, Silke ; Nelson, Bradley J.
Author_Institution
ETH Zurich, Zurich
fYear
2007
fDate
21-25 Jan. 2007
Firstpage
847
Lastpage
850
Abstract
We present the use of integrated semiconductor nanocoils for conductometric sensors. The three-dimensional structures are made of an n-type InGaAs/GaAs bilayer. They are suspended over the chip surface and connected to one electrode on each side. The process is based on conventional batch microfabrication techniques. Process and design features that are critical for the realization of this type of device are described. High sensor performance can be achieved due to the high surface-to-volume ratio of the helical nanostructures. The use of these structures for temperature sensors and for photoconductive detectors is demonstrated.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; microsensors; nanostructured materials; photoconducting devices; temperature sensors; 3D structures; InGaAs-GaAs; InGaAs/GaAs nanocoils; batch microfabrication techniques; conductometric sensors; helical nanostructures; n-type InGaAs/GaAs bilayer; photoconductive detectors; semiconductor nanocoils; temperature sensors; Etching; Gallium arsenide; Indium gallium arsenide; Intelligent sensors; Nanobioscience; Nanostructures; Optical sensors; Resists; Substrates; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location
Hyogo
ISSN
1084-6999
Print_ISBN
978-1-4244-095-5
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2007.4433178
Filename
4433178
Link To Document