DocumentCode :
2800763
Title :
Batch fabrication of carbon nanotubes on tips of a silicon pyramid array
Author :
Takagahara, Kazuhiko ; Takei, Yusuke ; Matsumoto, Kiyoshi ; Shimoyama, Isao
Author_Institution :
Univ. of Tokyo, Tokyo
fYear :
2007
fDate :
21-25 Jan. 2007
Firstpage :
855
Lastpage :
858
Abstract :
We have proposed batch fabrication of silicon pyramids with upward CNTs on the tips at one time by a chemical vapor deposition (CVD) process. To synthesize upward CNTs on the pyramid tips, an upward electric field was applied to the silicon pyramid array during the CVD process. By electric field simulation and verifying experiment on silicon one-dimensional array structures, we found that CNTs tended to grow from sharp tips in our method. We fabricated the silicon pyramid array with sharp tips by anisotropic wet etching. After the CVD process, CNTs growing from the tips of the pyramids were observed by a scanning electron microscope (SEM). As a result, about 70% of 100 times 100 silicon pyramid array had CNTs on the tips. Our method would be valuable for fabricating probes of atomic force microscope (AFM) with CNTs on the tips (CNT-AFM probes).
Keywords :
arrays; atomic force microscopy; batch processing (industrial); carbon nanotubes; chemical vapour deposition; elemental semiconductors; etching; nanotechnology; scanning electron microscopy; semiconductor nanotubes; silicon; AFM; CVD process; SEM; Si; anisotropic wet etching; atomic force microscope; batch fabrication; carbon nanotubes; chemical vapor deposition; electric field simulation; one-dimensional silicon array structures; scanning electron microscope; silicon pyramid array; Atmosphere; Atomic force microscopy; Carbon nanotubes; Counting circuits; Electrodes; Fabrication; Information science; Probes; Scanning electron microscopy; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location :
Hyogo
ISSN :
1084-6999
Print_ISBN :
978-1-4244-095-5
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2007.4433180
Filename :
4433180
Link To Document :
بازگشت