Title :
A Ku-band high efficiency ion-implanted MMIC amplifier
Author :
Le, H.M. ; Shih, Y.C. ; Chi, T. ; Fong, L. ; Kasel, K.
Author_Institution :
Hughes Aircraft Co., Torrance, CA, USA
Abstract :
The design of a three-stage single-ended power amplifier is described. Of the MMIC (monolithic microwave integrated circuit) amplifiers reported, this MMIC amplifier has the highest power gain of 18 dB, the highest power added efficiency of 30 percent, and a broad bandwidth from 12 GHz to 16 GHz. Also described are other pertinent factors of the ion implantation process.<>
Keywords :
MMIC; field effect integrated circuits; ion implantation; microwave amplifiers; power amplifiers; 12 to 16 GHz; 18 dB; 30 percent; 4 GHz; Ku-band; MMIC amplifier; SHF; high efficiency; ion-implanted; monolithic microwave integrated circuit; power added efficiency; single-ended power amplifier; three-stage; Aircraft; Bandwidth; FETs; Gain; High power amplifiers; Instruments; MESFETs; MMICs; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172707
