Title :
The junction ideality factor for ageing characterization
Author :
de la Bardonnie, M. ; Dib, Sami ; Mialhe, Pierre ; Charles, J.P.
Author_Institution :
Centre d´´Etudes Fondamentales, Perpignan Univ., France
Abstract :
A new method to investigate hot carrier degradation in submicrometer n-MOS transistors is presented. An alteration of the current-voltage characteristics of the substrate-drain junction has been observed after electrical constraints. Junction parameters are extracted and their variations after ageing steps are used to characterize the degradation of the device. Degradation processes by injected carriers are related to the insulating oxide edge defects in the gate to drain overlap region. The junction ideality factor appears as a sensitive parameter usable to characterize ageing effects and to quantify the magnitude of the degradations
Keywords :
MOSFET; ageing; hot carriers; carrier injection; current-voltage characteristics; electrical ageing; hot carrier degradation; ideality factor; insulating oxide edge defect; parameter extraction; submicrometer n-MOS transistor; substrate-drain junction; Aging; CMOS technology; Current-voltage characteristics; Degradation; Diodes; Hot carriers; Insulation; Spontaneous emission; Stress; Threshold voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698887
