DocumentCode :
2800791
Title :
Highly dense dual-channel C-X-Ku and 6-18 GHz MMIC power amplifiers
Author :
Platzker, A. ; Hetzler, K.T. ; Cole, J.B.
Author_Institution :
Raytheon Co., Lexington, MA, USA
fYear :
1991
fDate :
20-23 Oct. 1991
Firstpage :
339
Lastpage :
342
Abstract :
A state-of-the-art dual-channel 4-stage MMIC (monolithic microwave integrated circuit) power amplifier operating over C-X-Ku bands has been produced. The chip is very small, measuring only 4.35*5.1 mm. At 25 degrees C, each one of its channels provides 29.5+or-0.5 dBm at 2 dB compression (2 dBC) from a linear gain of 19.5+or-1.5 dB over 6-17 GHz. The drain bias is 7 V and the power-added efficiency (PAE) is 11-14%. At 85 degrees C, power and gain decrease by, respectively, 0.5 dB and 3.5-4 dB. The design was iterated once to produce the first all monolithic power amplifier chip which operates over 6-18 GHz and provides 28-29 dBm at 18 GHz. The architecture and size were maintained in the design. At 25 degrees C with V/sub ds/=7 V, it provides 29-30.5 dBm at 2 dBC from a linear gain of 19+or-1.25 dB over 6-18 GHz. At 85 degrees C, 28.75-30 dBm also at 2 dBC from a linear gain of 15+or-1 dB with PAE of 10-13% was achieved over 6-18 GHz.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; 10 to 14 percent; 15 dB; 19.5 dB; 25 degC; 6 to 18 GHz; 85 degC; C-band; Ku-band; MMIC; SHF; X-band; dual-channel; four stage type; monolithic microwave integrated circuit; power amplifiers; Bandwidth; Capacitors; Frequency; Gain; High power amplifiers; Impedance matching; MMICs; Power amplifiers; Topology; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
Type :
conf
DOI :
10.1109/GAAS.1991.172708
Filename :
172708
Link To Document :
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