A gigasample/s 5 bit ADC with on-chip track hold based on an industrial 1 mu m GaAs MESFET E/D process

Author

Hagelauer, R. ; Oehler, F. ; Rohmer, G. ; Sauerer, J. ; Seitzer, D.

Author_Institution

Fraunhofer-Inst. fur Integrierte Schaltungen, Erlangen, Germany

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

365

Lastpage

368

Abstract

To enhance the dynamic accuracy of high-speed A/D conversion, a 5 bit flash converter with on-chip track and hold circuitry has been developed. The design is based on a commercial 1 mu m GaAs E/D MESFET process. Dynamic characterization has been performed up to 1 GSps. An accuracy of 4.4 effective bits, even at 1 GSps with full Nyquist input, was achieved. A comparison showing the accuracy with track and hold in operation and in tracking only mode is given. The outstanding performance is due to a carefully designed track and hold and the use of differential SCFI in the converter.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; analogue-digital conversion; field effect integrated circuits; gallium arsenide; sample and hold circuits; 1 micron; 5 bit flash converter; ADC; GaAs; MESFET E/D process; differential SCFI; dynamic accuracy; gigasample/s; high-speed A/D conversion; on chip track/hold circuitry; tracking only mode; Circuits; FETs; Frequency; Gallium arsenide; MESFETs; Resistors; Schottky diodes; Signal resolution; Switches; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172715

Filename

172715