Electronic properties of silicon nanowires

Author

Yun Zheng ; Lake, R. ; Alam, K. ; Rivas, Carlos ; Boykin, T.B. ; Klimeck, G.

Author_Institution

Dept. of Electr. Eng., California Univ., Riverside, CA, USA

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

82

Lastpage

83

Abstract

This paper investigates the electronic structure of Si nanowires demonstrating the effect of wire thickness on the bangap, conduction valley splitting, hole band splitting, effective masses, and transmission. We use two different models, a three-dimensional (3D) discretization of the single-band effective mass equation, and a nearest neighbor sp/sup 3/d/sup 5/s* model, where the Hamiltonian matrix elements, are optimized with a genetic algorithm. Transmission coefficients are calculated using the non-equilibrium Green function (NEGF) formalism with a recursive Green function algorithm.

Keywords

Green´s function methods; genetic algorithms; nanowires; Hamiltonian matrix; bangap effect; conduction valley splitting; effective masses; electronic properties; genetic algorithm; hole band splitting; nearest neighbor model; non-equilibrium Green function; recursive Green function algorithm; silicon nanowires; single-band effective mass equation; transmission coefficients; wire thickness; Genetic algorithms; Green function;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on

Conference_Location

West Lafayette, IN, USA

Print_ISBN

0-7803-8649-3

Type

conf

DOI

10.1109/IWCE.2004.1407334

Filename

1407334