Title :
On the modelling and optimisation of a novel Schottky based silicon rectifier
Author :
van Hemert, T. ; Hueting, R.J.E. ; Rajasekharan, B. ; Salm, C. ; Schmitz, J.
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
Abstract :
The charge plasma (CP) diode is a novel silicon rectifier using Schottky barriers, to circumvent the requirement for doping and related problems when small device dimensions are used. We present a model for the DC current voltage characteristics and verify this using device simulations. The model revealed an exponential dependence of the current on the metal work functions. And approximate linear dependence on the device geometry. The model is used to optimise the device performance. We show a factor 30 improvement in on/off current ratio (and hence rectification) toward 10E7 by appropriate sizing of the lateral device dimensions at given specific metal work functions.
Keywords :
Schottky barriers; Schottky diodes; circuit optimisation; elemental semiconductors; plasma diodes; rectifiers; semiconductor device models; silicon; CP diode; DC current voltage characteristics; Schottky barriers; Schottky based silicon rectifier modelling; Si; approximate linear dependence; charge plasma diode; device geometry; device simulations; exponential dependence; metal work functions; on-off current ratio; Anodes; Cathodes; Charge carrier processes; Logic gates; Metals; Plasmas; Silicon;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618177
