Title :
A compact model for double gate carbon nanotube FET
Author :
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Author_Institution :
Lab. IMS, Univ. Bordeaux, Bordeaux, France
Abstract :
A compact model for Double gate carbon nanotube FET is presented. This compact model includes the most significant mechanism present in DGCNTFET such as Schottky barrier at the metallic-nanotube interface, charge, electrostatic modelling and quasi-ballistic transport through the Landauer equation. Then, this compact model is compared to measurement. Finally, a simple ring oscillator circuit has been simulated using ten identical devices highlighting new technology concepts.
Keywords :
Schottky barriers; carbon nanotubes; electrostatics; field effect transistors; semiconductor device models; DGCNTFET; Landauer equation; Schottky barrier; compact model; double gate carbon nanotube; electrostatic modelling; metallic-nanotube interface; quasi-ballistic transport; ring oscillator circuit; Biological system modeling; CNTFETs; Computational modeling; Integrated circuit modeling; Logic gates; Mathematical model; Schottky barriers;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618180
