DocumentCode
2801140
Title
A compact model for double gate carbon nanotube FET
Author
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Author_Institution
Lab. IMS, Univ. Bordeaux, Bordeaux, France
fYear
2010
fDate
14-16 Sept. 2010
Firstpage
452
Lastpage
455
Abstract
A compact model for Double gate carbon nanotube FET is presented. This compact model includes the most significant mechanism present in DGCNTFET such as Schottky barrier at the metallic-nanotube interface, charge, electrostatic modelling and quasi-ballistic transport through the Landauer equation. Then, this compact model is compared to measurement. Finally, a simple ring oscillator circuit has been simulated using ten identical devices highlighting new technology concepts.
Keywords
Schottky barriers; carbon nanotubes; electrostatics; field effect transistors; semiconductor device models; DGCNTFET; Landauer equation; Schottky barrier; compact model; double gate carbon nanotube; electrostatic modelling; metallic-nanotube interface; quasi-ballistic transport; ring oscillator circuit; Biological system modeling; CNTFETs; Computational modeling; Integrated circuit modeling; Logic gates; Mathematical model; Schottky barriers;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location
Sevilla
ISSN
1930-8876
Print_ISBN
978-1-4244-6658-0
Type
conf
DOI
10.1109/ESSDERC.2010.5618180
Filename
5618180
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