A monolithic 24-GHz frequency source using InP-based HEMT-HBT integration technology

Author

Wang, H. ; Lin, E. ; Lo, D.C.W. ; Lai, R. ; Tran, L. ; Cowles, J. ; Chen, Y.C. ; Block, T. ; Liu, P.H. ; Yen, H.C. ; Stamper, K.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

fYear

1997

fDate

10-10 June 1997

Firstpage

79

Lastpage

81

Abstract

This paper presents the development of a 24-GHz monolithic frequency source using InP-based HEMT-HBT integration technology. This frequency source consists of a 24-GHz HBT voltage controlled oscillator (VCO) and a HEMT buffer amplifier, and was fabricated on a single 3-mil thick InP substrate. It exhibits a measured oscillation frequency of 24.6 GHz with an output power of 4.2 dBm. This is the first successful demonstration of MMIC using InP-based HEMT-HBT integration technology.

Keywords

III-V semiconductors; MMIC amplifiers; MMIC oscillators; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit technology; microwave oscillators; voltage-controlled oscillators; 24 to 24.6 GHz; HBT VCO; HEMT buffer amplifier; HEMT-HBT integration technology; InP; InP substrate; InP-based technology; MMIC; SHF; monolithic frequency source; voltage controlled oscillator; Frequency measurement; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit measurements; MMICs; Power measurement; Space technology; Substrates; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-4063-9

Type

conf

DOI

10.1109/RFIC.1997.598746

Filename

598746