Title :
A High Gain Low Noise Amplifier for 0.9-6 GHz Wireless Applications
Author :
Baishya, A. ; Sahu, P.P. ; Naskar, M.K.
Author_Institution :
Deptt of Electron. & Commun. Engg, Tezpur Univ., Tezpur, India
Abstract :
A 0.9-6 GHz broadband MOS based low noise amplifier with L type input matching network and π type output matching network is proposed for ultra wide band applications. The input L type matching network is used to fix the Q factor whereas the output π-type matching network provides an extra degree of freedom to adjust the bandwidth. The proposed circuit was designed and simulated by using AWR´s microwave office version 9.03; It is seen from the simulation results that the gain of ~ 22.7 dB for the frequency range of 0.9 to 6 GHz and noise figure (NF) of <;2.5 dB are obtained and found to be reasonably good in comparison to the reported works.
Keywords :
MOS analogue integrated circuits; Q-factor; UHF amplifiers; integrated circuit design; low noise amplifiers; microwave amplifiers; microwave integrated circuits; ultra wideband communication; π type output matching network; AWR; L type input matching network; Q factor; broadband MOS based low noise amplifier; frequency 0.9 GHz to 6 GHz; gain 22.7 dB; microwave office version 9.03; Bandwidth; CMOS integrated circuits; Gain; Impedance matching; Low-noise amplifiers; Noise figure;
Conference_Titel :
Devices and Communications (ICDeCom), 2011 International Conference on
Conference_Location :
Mesra
Print_ISBN :
978-1-4244-9189-6
DOI :
10.1109/ICDECOM.2011.5738525
