DocumentCode
2801381
Title
Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits
Author
Pease, Ronald L. ; Shaneyfelt, Marty ; Winokur, Peter ; Fleetwood, Dan ; Gorelick, Jerry ; McClure, Steve ; Clark, Steve ; Cohn, Lew ; Alexander, Dave
Author_Institution
RLP Res., Albuquerque, NM, USA
fYear
1997
fDate
15-19 Sep 1997
Firstpage
206
Lastpage
211
Abstract
The ionizing radiation response of several semiconductor process technologies has been shown to be affected by preirradiation thermal stress. Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS
Keywords
bipolar analogue integrated circuits; gamma-ray effects; thermal stresses; bipolar linear microcircuit; ionizing radiation response; preirradiation thermal stress; semiconductor process technology; total dose sensitivity; CMOS technology; Ceramics; Laboratories; MOSFETs; Plastic packaging; Radiation hardening; Space technology; Temperature; Thermal stresses; Weapons;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698890
Filename
698890
Link To Document