Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Author

Kim, Wan Gee ; Sung, Min Gyu ; Kim, Sook Joo ; Kim, Ja Yong ; Moon, Ji Won ; Yoon, Sung Joon ; Kim, Jung Nam ; Gyun, Byung Gu ; Kim, Taeh Wan ; Kim, Chi Ho ; Byun, Jun Young ; Kim, Won ; Youn, Te One ; Yoo, Jong Hee ; Oh, Jang Won ; Kim, Ho Joung ; Joo, M

Author_Institution

R&D Div., Hynix Semicond. Inc., Icheon, South Korea

fYear

2010

fDate

14-16 Sept. 2010

Firstpage

400

Lastpage

403

Abstract

In this paper, a systematic approach using HfO₂, ZrO₂ and TiO₂ with TiN or Ti/TiN electrode has been conducted to research the best material for ReRAM device integration. From the experimental results and proposed model, the proper electrical properties such as the stability of switching variation, low current and voltage operation, long endurance and retention characteristics are obtained with a TiN/Ti/HfO₂/TiN structure.

Keywords

random-access storage; HfO₂; ReRAM device integration; Ti-TiN; TiN; TiO₂; ZrO₂; electrical properties; electrode; long endurance; low current; resistance random access memory; retention characteristics; switching characteristics; switching variation; transition metal oxide; voltage operation; Current measurement; Electrodes; Materials; Resistance; Switches; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Conference_Location

Sevilla

ISSN

1930-8876

Print_ISBN

978-1-4244-6658-0

Type

conf

DOI

10.1109/ESSDERC.2010.5618197

Filename

5618197